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IRF7805QPbF
Static @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV DSS
R DS(on)
V GS(th)
I DSS
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
30
–––
1.0
–––
–––
–––
9.2
–––
–––
–––
–––
11
3.0
70
10
V
m Ω
V
μ A
V GS = 0V, I D = 250 μ A
V GS = 4.5V, I D = 7.0A
V DS = V GS , I D = 250 μ A
V DS = 30V, V GS = 0V
V DS = 24V, V GS = 0V
–––
–––
150
V DS = 24V, V GS = 0V, T J = 100°C
I GSS
Q g
Q gs1
Q gs2
Q gd
Q sw
Q oss
R G
t d(on)
t r
t d(off)
t f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Switch Charge (Q gs2 + Q gd )
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
–––
–––
0.5
–––
–––
–––
–––
–––
–––
22
3.7
1.4
6.8
8.2
3.0
–––
16
20
38
16
100
-100
31
–––
–––
–––
11.5
3.6
1.7
–––
–––
–––
–––
nA
nC
nC
Ω
ns
V GS = 12V
V GS = -12V
V GS = 5.0V
V DS = 16V
I D = 7.0A
V DS = 16V, V GS = 0V
V DD = 16V, V GS = 4.5V
I D = 7.0A
R G = 2 Ω
Resistive Load
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
V SD
Q rr
Q rr(s)
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Charge
Reverse Recovery Charge
(with Parallel Schottky)
–––
–––
–––
–––
–––
–––
–––
–––
88
55
2.5
106
1.2
–––
–––
A
V
ns
nC
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T J = 25°C, I S = 7.0A, V GS = 0V
di/dt = 700A/ μ s
V DS = 16V, V GS = 0V, I S = 7.0A
di/dt = 700A/ μ s (with 10BQ040)
V DS = 16V, V GS = 0V, I S = 7.0A
Notes:
?
?
?
?
?
?
2
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 μ s; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Q oss
R θ is measured at T J of approximately 90°C.
Devices are 100% tested to these parameters.
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